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Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects

Date

2007
Proceedings Paper
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dc.contributor.authorZahid, Mohammed
dc.contributor.authorPantisano, Luigi
dc.contributor.authorDegraeve, Robin
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorTrojman, Lionel
dc.contributor.authorFerain, Isabelle
dc.contributor.authorSan Andres Serrano, Enrique
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorZhang, J.F.
dc.contributor.authorHeyns, Marc
dc.contributor.authorJurczak, Gosia
dc.contributor.authorDe Gendt, Stefan
dc.contributor.imecauthorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.date.accessioned2021-10-16T21:57:16Z
dc.date.available2021-10-16T21:57:16Z
dc.date.issued2007
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/13257
dc.source.beginpage32
dc.source.conferenceSymposium on VLSI Technology. Digest of Technical Papers
dc.source.conferencedate14/06/2007
dc.source.conferencelocationKyoto
dc.source.endpage33
dc.title

Advanced electrical characterization toward (sub) 1nm EOT HfSiON – hole trapping in PFET and L-dependent effects

dc.typeProceedings paper
dspace.entity.typePublication
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