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On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics

Date

2011
Proceedings Paper
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dc.contributor.authorRagnarsson, Lars-Ake
dc.contributor.authorMitard, Jerome
dc.contributor.authorKauerauf, Thomas
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorSchram, Tom
dc.contributor.authorRohr, Erika
dc.contributor.authorCollaert, Nadine
dc.contributor.authorJurczak, Gosia
dc.contributor.authorHong, Sug-Hun
dc.contributor.authorTseng, Joshua
dc.contributor.authorWang, Wei-E
dc.contributor.authorTrojman, Lionel
dc.contributor.authorBourdelle, Konstantin
dc.contributor.authorNguyen, B-Y
dc.contributor.authorAbsil, Philippe
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.imecauthorRagnarsson, Lars-Ake
dc.contributor.imecauthorMitard, Jerome
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.orcidimecRagnarsson, Lars-Ake::0000-0003-1057-8140
dc.contributor.orcidimecMitard, Jerome::0000-0002-7422-079X
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-19T17:52:50Z
dc.date.available2021-10-19T17:52:50Z
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/19652
dc.source.beginpage116
dc.source.conferenceInternational Symposium on VLSI Technology, Systems and Applications - VLSI-TSA
dc.source.conferencedate25/04/2011
dc.source.conferencelocationHsinchu Taiwan
dc.source.endpage117
dc.title

On the origin of the mobility reduction in bulk-Si, UTBOX-FDSOI and SiGe devices with ultrathin-EOT dielectrics

dc.typeProceedings paper
dspace.entity.typePublication
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