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Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells
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Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells
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Date
2011
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Collaert, Nadine
;
Aoulaiche, Marc
;
De Keersgieter, An
;
De Wachter, Bart
;
Altimime, Laith
;
Jurczak, Gosia
Journal
Solid-State Electronics
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1850
since deposited on 2021-10-19
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Acq. date: 2025-12-15
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Metrics
Views
1850
since deposited on 2021-10-19
1
last month
Acq. date: 2025-12-15
Citations