Publication:

Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells

Date

2011
Journal article
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dc.contributor.authorCollaert, Nadine
dc.contributor.authorAoulaiche, Marc
dc.contributor.authorDe Keersgieter, An
dc.contributor.authorDe Wachter, Bart
dc.contributor.authorAltimime, Laith
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Keersgieter, An
dc.contributor.imecauthorDe Wachter, Bart
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecDe Keersgieter, An::0000-0002-5527-8582
dc.date.accessioned2021-10-19T12:53:45Z
dc.date.available2021-10-19T12:53:45Z
dc.date.issued2011
dc.identifier.issn0038-1101
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18719
dc.source.beginpage205
dc.source.endpage210
dc.source.journalSolid-State Electronics
dc.source.volume65-66
dc.title

Substrate bias dependency of sense margin and retention in bulk FinFET 1T-DRAM cells

dc.typeJournal article
dspace.entity.typePublication
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