Publication:
p-GaN e-mode HEMT power device manufacturing on 200mm substrates using aixtron AIX G5+C MOCVD system
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2098 since deposited on 2021-10-23
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Acq. date: 2026-07-15
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Statistics
Views
2098 since deposited on 2021-10-23
1last month
1last week
Acq. date: 2026-07-15
Citations