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p-GaN e-mode HEMT power device manufacturing on 200mm substrates using aixtron AIX G5+C MOCVD system
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2091 since deposited on 2021-10-23
Acq. date: 2025-12-12
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Views
2091 since deposited on 2021-10-23
Acq. date: 2025-12-12
Citations