Publication:
p-GaN e-mode HEMT power device manufacturing on 200mm substrates using aixtron AIX G5+C MOCVD system
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2094 since deposited on 2021-10-23
3last month
Acq. date: 2026-02-24
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Views
2094 since deposited on 2021-10-23
3last month
Acq. date: 2026-02-24
Citations