Publication:

p-GaN e-mode HEMT power device manufacturing on 200mm substrates using aixtron AIX G5+C MOCVD system

Date

2016
Meeting abstract
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dc.contributor.authorLiang, Hu
dc.contributor.authorPosthuma, Niels
dc.contributor.authorEickelkamp, Martin
dc.contributor.authorFahle, Dirk
dc.contributor.authorVan Hove, Marleen
dc.contributor.authorZhao, Ming
dc.contributor.authorDecoutere, Stefaan
dc.contributor.authorLanger, Robert
dc.contributor.imecauthorLiang, Hu
dc.contributor.imecauthorPosthuma, Niels
dc.contributor.imecauthorZhao, Ming
dc.contributor.imecauthorDecoutere, Stefaan
dc.contributor.imecauthorLanger, Robert
dc.contributor.orcidimecPosthuma, Niels::0000-0002-6029-1909
dc.contributor.orcidimecZhao, Ming::0000-0002-0856-851X
dc.contributor.orcidimecDecoutere, Stefaan::0000-0001-6632-6239
dc.contributor.orcidimecLanger, Robert::0000-0002-1132-3468
dc.date.accessioned2021-10-23T12:13:07Z
dc.date.available2021-10-23T12:13:07Z
dc.date.issued2016
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/26908
dc.source.conference13th China International Forum on Solid State Lighting - SSLCHINA
dc.source.conferencedate15/11/2016
dc.source.conferencelocationBeijing China
dc.title

p-GaN e-mode HEMT power device manufacturing on 200mm substrates using aixtron AIX G5+C MOCVD system

dc.typeMeeting abstract
dspace.entity.typePublication
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