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Aqueous solutions for low-temperature photoannealing of functional oxide films: reaching the 400 degrees C Si-technology integration barrier
Publication:
Aqueous solutions for low-temperature photoannealing of functional oxide films: reaching the 400 degrees C Si-technology integration barrier
Date
2011
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
De Dobbelaere, C.
;
Calzada, M.L.
;
Jimenez, R.
;
Ricote, J.
;
Bretos, I.
;
Mullens, J.
;
Hardy, An
;
Van Bael, Marlies
Journal
Journal of the American Chemical Society
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1907
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Acq. date: 2025-12-08
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1907
since deposited on 2021-10-19
1
last month
Acq. date: 2025-12-08
Citations