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In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition : Initial growth of HfO2 on Si and Ge substrates

Date

2011
Journal article
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dc.contributor.authorDevloo-Casier, K.
dc.contributor.authorDendooven, J.
dc.contributor.authorLudwig, K.F.
dc.contributor.authorLekens, Geert
dc.contributor.authorD'Haen, Jan
dc.contributor.authorDetavernier, C.
dc.contributor.imecauthorLekens, Geert
dc.contributor.imecauthorD'Haen, Jan
dc.date.accessioned2021-10-19T13:15:44Z
dc.date.available2021-10-19T13:15:44Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.issn0003-6951
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18839
dc.source.beginpage231905
dc.source.issue23
dc.source.journalApplied Physics Letters
dc.source.volume98
dc.title

In situ synchrotron based x-ray fluorescence and scattering measurements during atomic layer deposition : Initial growth of HfO2 on Si and Ge substrates

dc.typeJournal article
dspace.entity.typePublication
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