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X-ray photoelectron diffraction study of thin Al2O3 films grown on Si(111) by molecular beam epitaxy

Date

2009
Journal article
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dc.contributor.authorEl-Kazzi, Mario
dc.contributor.authorGrenet, Genevieve
dc.contributor.authorMerckling, Clement
dc.contributor.authorSaint-Girons, Guillaume
dc.contributor.authorBotella, Claude
dc.contributor.authorMarty, Olivier
dc.contributor.authorHollinger, Guy
dc.contributor.imecauthorMerckling, Clement
dc.contributor.orcidimecMerckling, Clement::0000-0003-3084-2543
dc.date.accessioned2021-10-17T22:05:32Z
dc.date.available2021-10-17T22:05:32Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.issn1098-0121
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15271
dc.source.beginpage195312
dc.source.issue19
dc.source.journalPhysical Review B
dc.source.volume79
dc.title

X-ray photoelectron diffraction study of thin Al2O3 films grown on Si(111) by molecular beam epitaxy

dc.typeJournal article
dspace.entity.typePublication
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