Publication:

Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology

Date

2023
Journal article
https://doi.org/10.1109/TDMR.2023.3288380
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dc.contributor.authorSangani, Dishant
dc.contributor.authorDiaz Fortuny, Javier
dc.contributor.authorBury, Erik
dc.contributor.authorFranco, Jacopo
dc.contributor.authorKaczer, Ben
dc.contributor.authorGielen, Georges
dc.contributor.imecauthorSangani, Dishant
dc.contributor.imecauthorDiaz Fortuny, Javier
dc.contributor.imecauthorBury, Erik
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorGielen, Georges
dc.contributor.orcidimecSangani, Dishant::0000-0002-1016-8654
dc.contributor.orcidimecDiaz Fortuny, Javier::0000-0002-8186-071X
dc.contributor.orcidimecBury, Erik::0000-0002-5847-3949
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2024-04-25T08:28:08Z
dc.date.available2023-10-13T17:18:15Z
dc.date.available2024-04-25T08:28:08Z
dc.date.embargo2023-06-21
dc.date.issued2023
dc.identifier.doi10.1109/TDMR.2023.3288380
dc.identifier.issn1530-4388
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42731
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage346
dc.source.endpage354
dc.source.issue3
dc.source.journalIEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY
dc.source.numberofpages9
dc.source.volume23
dc.subject.keywordsINSTABILITY
dc.title

Modeling Analysis of BTI-Driven Degradation of a Ring Oscillator Designed in a 28-nm CMOS Technology

dc.typeJournal article
dspace.entity.typePublication
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