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A TCAD low-field electron mobility model for thin-body InGaAs on InP MOSFETs calibrated to experimental characteristics
Publication:
A TCAD low-field electron mobility model for thin-body InGaAs on InP MOSFETs calibrated to experimental characteristics
Date
2015
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Betti Beneventi, Giovanni
;
Reggiani, Susanna
;
Gnudi, Antonio
;
Gnani, Elena
;
Alian, AliReza
;
Collaert, Nadine
;
Mocuta, Anda
;
Thean, Aaron
;
Baccarani, Giorgio
Journal
IEEE Transactions on Electron Devices
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1876
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations
Metrics
Views
1876
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations