A TCAD low-field electron mobility model for thin-body InGaAs on InP MOSFETs calibrated to experimental characteristics

dc.contributor.author	Betti Beneventi, Giovanni
dc.contributor.author	Reggiani, Susanna
dc.contributor.author	Gnudi, Antonio
dc.contributor.author	Gnani, Elena
dc.contributor.author	Alian, AliReza
dc.contributor.author	Collaert, Nadine
dc.contributor.author	Mocuta, Anda
dc.contributor.author	Thean, Aaron
dc.contributor.author	Baccarani, Giorgio
dc.contributor.imecauthor	Alian, AliReza
dc.contributor.imecauthor	Collaert, Nadine
dc.contributor.imecauthor	Thean, Aaron
dc.contributor.orcidimec	Collaert, Nadine::0000-0002-8062-3165
dc.date.accessioned	2021-10-22T18:33:08Z
dc.date.available	2021-10-22T18:33:08Z
dc.date.embargo	9999-12-31
dc.date.issued	2015
dc.identifier.issn	0018-9383
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/24989
dc.identifier.url	http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=7293162
dc.source.beginpage	3645
dc.source.endpage	3652
dc.source.issue	11
dc.source.journal	IEEE Transactions on Electron Devices
dc.source.volume	62
dc.title	A TCAD low-field electron mobility model for thin-body InGaAs on InP MOSFETs calibrated to experimental characteristics
dc.type	Journal article
dspace.entity.type	Publication
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