Publication:

Properties of electron traps generated in the gate oxide

Date

2001
Presentation
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dc.contributor.authorZhang, Wenqi
dc.contributor.authorZhang, Jenny
dc.contributor.authorLalor, M.
dc.contributor.authorBurton, D.
dc.contributor.authorGroeseneken, Guido
dc.contributor.authorDegraeve, Robin
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.imecauthorDegraeve, Robin
dc.date.accessioned2021-10-14T18:31:52Z
dc.date.available2021-10-14T18:31:52Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5873
dc.source.conferenceSISC-Conference; December 2001; Washington, D.C.
dc.source.conferencelocation
dc.title

Properties of electron traps generated in the gate oxide

dc.typeOral presentation
dspace.entity.typePublication
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