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Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors
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Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors
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Date
2024-FEB 2
Journal article
https://doi.org/10.1038/s41699-024-00445-0
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Illarionov, Yu. Yu.
;
Karl, A.
;
Smets, Quentin
;
Kaczer, Ben
;
Knobloch, T.
;
Panarella, Luca
;
Schram, Tom
;
Brems, Steven
;
Cott, Daire
;
Asselberghs, Inge
;
Grasser, T.
Journal
NPJ 2D MATERIALS AND APPLICATIONS
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618
since deposited on 2024-02-13
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Metrics
Views
618
since deposited on 2024-02-13
5
last month
Acq. date: 2025-12-24
Citations