Publication:

Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

Date

2024-FEB 2
Journal article
https://doi.org/10.1038/s41699-024-00445-0
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cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.department#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0002-0282-8528
cris.virtual.orcid0009-0000-0890-8820
cris.virtual.orcid#PLACEHOLDER_PARENT_METADATA_VALUE#
cris.virtual.orcid0000-0001-8371-3222
cris.virtual.orcid0000-0002-2356-5915
cris.virtual.orcid0000-0002-1484-4007
cris.virtual.orcid0000-0003-1533-7055
cris.virtualsource.departmentb75defcd-5254-4816-bb35-ccd8c5db1cb0
cris.virtualsource.department65e35b50-3856-474e-99bc-3b8dc48e80a7
cris.virtualsource.department51185be9-9b92-4b52-b24c-ac56cd4b15f3
cris.virtualsource.department51c894df-18d8-4358-a52a-d14ab7e9edb1
cris.virtualsource.department2278f1c0-d873-46fa-9ffd-a7813ebb3f50
cris.virtualsource.department812f2909-a81b-4593-9b32-75331cffa35c
cris.virtualsource.department2fc65eb2-c2f1-4505-bb09-96f2d0aa6ce9
cris.virtualsource.orcidb75defcd-5254-4816-bb35-ccd8c5db1cb0
cris.virtualsource.orcid65e35b50-3856-474e-99bc-3b8dc48e80a7
cris.virtualsource.orcid51185be9-9b92-4b52-b24c-ac56cd4b15f3
cris.virtualsource.orcid51c894df-18d8-4358-a52a-d14ab7e9edb1
cris.virtualsource.orcid2278f1c0-d873-46fa-9ffd-a7813ebb3f50
cris.virtualsource.orcid812f2909-a81b-4593-9b32-75331cffa35c
cris.virtualsource.orcid2fc65eb2-c2f1-4505-bb09-96f2d0aa6ce9
dc.contributor.authorIllarionov, Yu. Yu.
dc.contributor.authorKarl, A.
dc.contributor.authorSmets, Quentin
dc.contributor.authorKaczer, Ben
dc.contributor.authorKnobloch, T.
dc.contributor.authorPanarella, Luca
dc.contributor.authorSchram, Tom
dc.contributor.authorBrems, Steven
dc.contributor.authorCott, Daire
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorGrasser, T.
dc.contributor.imecauthorSmets, Q.
dc.contributor.imecauthorKaczer, B.
dc.contributor.imecauthorPanarella, L.
dc.contributor.imecauthorSchram, T.
dc.contributor.imecauthorBrems, S.
dc.contributor.imecauthorCott, D.
dc.contributor.imecauthorAsselberghs, I.
dc.date.accessioned2024-02-13T17:53:03Z
dc.date.available2024-02-13T17:53:03Z
dc.date.issued2024-FEB 2
dc.description.wosFundingTextThis research was funded in part by the Austrian Science Fund (FWF) [I2606-N30, I4123-N30 (joint project with DFG LE 2440/7-1) and I5296-N] and also by the European Union's Horizon 2020 research and innovation programme under grant agreement 952792 (2D-EPL). For open access purposes, the author has applied a CC BY public copyright license to any author accepted manuscript version arising from this submission. Furthermore, T.K. acknowledges financial support through the FFG under project no. 1755510. Y.Y.I. also acknowledges financial support by Shenzhen Science and Technology Program (20231115150611001) and the start up fund provided by SUSTech.
dc.identifier.doi10.1038/s41699-024-00445-0
dc.identifier.issn2397-7132
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43543
dc.publisherNATURE PORTFOLIO
dc.source.beginpage8
dc.source.issue1
dc.source.journalNPJ 2D MATERIALS AND APPLICATIONS
dc.source.numberofpages7
dc.source.volume8
dc.subject.keywordsCOMPACT-PHYSICS FRAMEWORK
dc.subject.keywords2-DIMENSIONAL MATERIALS
dc.subject.keywordsHYSTERESIS
dc.title

Process implications on the stability and reliability of 300 mm FAB MoS2 field-effect transistors

dc.typeJournal article
dspace.entity.typePublication
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