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Study of the etching mechanisme of heavily n type doped Si in HF solutions
Publication:
Study of the etching mechanisme of heavily n type doped Si in HF solutions
Date
2010
Presentation
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Cuypers, Daniel
Journal
Abstract
Description
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Views
1890
since deposited on 2021-10-18
407
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations
Metrics
Views
1890
since deposited on 2021-10-18
407
item.page.metrics.field.last-week
Acq. date: 2025-10-25
Citations