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Study of the etching mechanisme of heavily n type doped Si in HF solutions
Publication:
Study of the etching mechanisme of heavily n type doped Si in HF solutions
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Date
2010
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Cuypers, Daniel
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Abstract
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1895
since deposited on 2021-10-18
Acq. date: 2025-12-11
Citations
Metrics
Views
1895
since deposited on 2021-10-18
Acq. date: 2025-12-11
Citations