Publication:

Study of the etching mechanisme of heavily n type doped Si in HF solutions

Date

2010
Presentation
Simple item page Full metadata Statistics
 
dc.contributor.authorCuypers, Daniel
dc.date.accessioned2021-10-18T15:44:53Z
dc.date.available2021-10-18T15:44:53Z
dc.date.issued2010
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/16926
dc.source.conferenceVlaams Jongeren congres voor Chemie - VJC
dc.source.conferencedate1/03/2010
dc.source.conferencelocationBlankenberge Belgium
dc.title

Study of the etching mechanisme of heavily n type doped Si in HF solutions

dc.typeOral presentation
dspace.entity.typePublication
Files
Publication available in collections:
Presentations