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A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Publication:
A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET
Date
2017
Journal article
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vais, Abhitosh
;
Franco, Jacopo
;
Martens, Koen
;
Lin, Dennis
;
Sioncke, Sonja
;
Putcha, Vamsi
;
Nyns, Laura
;
Maes, Jan
;
Xie, Qi
;
Givens, Michael
;
Tang, Fu
;
Jiang, Xiaoqiang
;
Mocuta, Anda
;
Collaert, Nadine
;
Thean, Aaron
;
De Meyer, Kristin
Journal
IEEE Electron Device Letters
Abstract
Description
Metrics
Views
1996
since deposited on 2021-10-24
Acq. date: 2025-10-23
Citations
Metrics
Views
1996
since deposited on 2021-10-24
Acq. date: 2025-10-23
Citations