Publication:

A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET

Date

2017
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dc.contributor.authorVais, Abhitosh
dc.contributor.authorFranco, Jacopo
dc.contributor.authorMartens, Koen
dc.contributor.authorLin, Dennis
dc.contributor.authorSioncke, Sonja
dc.contributor.authorPutcha, Vamsi
dc.contributor.authorNyns, Laura
dc.contributor.authorMaes, Jan
dc.contributor.authorXie, Qi
dc.contributor.authorGivens, Michael
dc.contributor.authorTang, Fu
dc.contributor.authorJiang, Xiaoqiang
dc.contributor.authorMocuta, Anda
dc.contributor.authorCollaert, Nadine
dc.contributor.authorThean, Aaron
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorVais, Abhitosh
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorMartens, Koen
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorPutcha, Vamsi
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorXie, Qi
dc.contributor.imecauthorGivens, Michael
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecVais, Abhitosh::0000-0002-0317-7720
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecMartens, Koen::0000-0001-7135-5536
dc.contributor.orcidimecPutcha, Vamsi::0000-0003-1907-5486
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.date.accessioned2021-10-24T15:26:04Z
dc.date.available2021-10-24T15:26:04Z
dc.date.embargo9999-12-31
dc.date.issued2017
dc.identifier.issn0741-3106
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/29616
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7833041/
dc.source.beginpage318
dc.source.endpage321
dc.source.issue3
dc.source.journalIEEE Electron Device Letters
dc.source.volume38
dc.title

A new quality metric for III-V/high-k MOS gate stacks based on the frequency dispersion of accumulation capacitance and the CET

dc.typeJournal article
dspace.entity.typePublication
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