Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress

Publication:

2016

Journal article

Author(s)

;

Meneghini, Matteo

;

Rossetto, Isabella

;

Van Hove, Marleen

;

;

Wu, Tian-Li

;

;

Meneghesso, Gaudenzio

;

Zanoni, Enrico

IEEE Electron Device Letters

1963 since deposited on 2021-10-23

Acq. date: 2025-12-10