Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress

dc.contributor.author	Ruzzarin, Maria
dc.contributor.author	Meneghini, Matteo
dc.contributor.author	Rossetto, Isabella
dc.contributor.author	Van Hove, Marleen
dc.contributor.author	Stoffels, Steve
dc.contributor.author	Wu, Tian-Li
dc.contributor.author	Decoutere, Stefaan
dc.contributor.author	Meneghesso, Gaudenzio
dc.contributor.author	Zanoni, Enrico
dc.contributor.imecauthor	Ruzzarin, Maria
dc.contributor.imecauthor	Stoffels, Steve
dc.contributor.imecauthor	Decoutere, Stefaan
dc.contributor.orcidimec	Decoutere, Stefaan::0000-0001-6632-6239
dc.date.accessioned	2021-10-23T14:28:03Z
dc.date.available	2021-10-23T14:28:03Z
dc.date.issued	2016
dc.identifier.issn	0741-3106
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/27250
dc.identifier.url	http://ieeexplore.ieee.org/document/7565474/
dc.source.beginpage	1415
dc.source.endpage	1417
dc.source.issue	11
dc.source.journal	IEEE Electron Device Letters
dc.source.volume	37
dc.title	Evidence of hot-electron degradation in GaN-based MIS-HEMTs submitted to high temperature constant source current stress
dc.type	Journal article
dspace.entity.type	Publication
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