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Effective attenuation length of Al Ka-excited Si2p photoelectrons in SiO2, Al2O3 and HfO2 thin films
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Effective attenuation length of Al Ka-excited Si2p photoelectrons in SiO2, Al2O3 and HfO2 thin films
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Date
2005
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Vitchev, R.G.
;
Defranoux, Chr
;
Wolstenholme, J
;
Conard, Thierry
;
Bender, Hugo
;
Pireaux, J.J.
Journal
Journal of Electron Spectroscopy and Related Phenomena
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1940
since deposited on 2021-10-16
Acq. date: 2025-12-12
Citations
Metrics
Views
1940
since deposited on 2021-10-16
Acq. date: 2025-12-12
Citations