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Effective attenuation length of Al Ka-excited Si2p photoelectrons in SiO2, Al2O3 and HfO2 thin films

Date

2005
Journal article
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dc.contributor.authorVitchev, R.G.
dc.contributor.authorDefranoux, Chr
dc.contributor.authorWolstenholme, J
dc.contributor.authorConard, Thierry
dc.contributor.authorBender, Hugo
dc.contributor.authorPireaux, J.J.
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorBender, Hugo
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.date.accessioned2021-10-16T06:55:12Z
dc.date.available2021-10-16T06:55:12Z
dc.date.issued2005
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/11522
dc.source.beginpage37
dc.source.endpage44
dc.source.issue1_3
dc.source.journalJournal of Electron Spectroscopy and Related Phenomena
dc.source.volume149
dc.title

Effective attenuation length of Al Ka-excited Si2p photoelectrons in SiO2, Al2O3 and HfO2 thin films

dc.typeJournal article
dspace.entity.typePublication
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