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Effects of pre-amorphization implantation (PAI) in ultra shallow junctions formed by SPER in deep sub-micron devices

Date

2004-01
Proceedings Paper
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dc.contributor.authorSeveri, Simone
dc.contributor.authorHenson, Kirklen
dc.contributor.authorLindsay, Richard
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorSeveri, Simone
dc.contributor.imecauthorDe Meyer, Kristin
dc.date.accessioned2021-10-15T16:09:21Z
dc.date.available2021-10-15T16:09:21Z
dc.date.embargo9999-12-31
dc.date.issued2004-01
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9579
dc.source.beginpage69
dc.source.conference5th European Workshop on Ultimate Integration of Silicon - ULIS
dc.source.conferencedate20/03/2004
dc.source.conferencelocationLeuven Belgium
dc.source.endpage72
dc.title

Effects of pre-amorphization implantation (PAI) in ultra shallow junctions formed by SPER in deep sub-micron devices

dc.typeProceedings paper
dspace.entity.typePublication
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