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Reverse-bias degradation of AlGaN/GaN vertical Schottky diodes: an investigation based on electrical and capacitive measurements

Date

2012
Proceedings Paper
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dc.contributor.authorMeneghini, M.
dc.contributor.authorBertin, M.
dc.contributor.authorDal Santo, G.
dc.contributor.authorStocco, A.
dc.contributor.authorBisi, D.
dc.contributor.authorMarcon, Denis
dc.contributor.authorMalinowski, Pawel
dc.contributor.authorChini, A.
dc.contributor.authorMenghesso, G.
dc.contributor.authorZanoni, E.
dc.contributor.imecauthorMarcon, Denis
dc.contributor.imecauthorMalinowski, Pawel
dc.contributor.orcidimecMalinowski, Pawel::0000-0002-2934-470X
dc.date.accessioned2021-10-20T13:26:02Z
dc.date.available2021-10-20T13:26:02Z
dc.date.issued2012
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21132
dc.source.conferenceInternational Symposium on Compound Semiconductor
dc.source.conferencedate27/08/2012
dc.source.conferencelocationSanta Barbara, CA USA
dc.title

Reverse-bias degradation of AlGaN/GaN vertical Schottky diodes: an investigation based on electrical and capacitive measurements

dc.typeProceedings paper
dspace.entity.typePublication
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