FinFETs junctions optimization by conventional ion implantation for (sub-)22nm technology nodes circuit applications

dc.contributor.author	Veloso, Anabela
dc.contributor.author	De Keersgieter, An
dc.contributor.author	Brus, Stephan
dc.contributor.author	Horiguchi, Naoto
dc.contributor.author	Absil, Philippe
dc.contributor.author	Hoffmann, Thomas Y.
dc.contributor.imecauthor	Veloso, Anabela
dc.contributor.imecauthor	De Keersgieter, An
dc.contributor.imecauthor	Brus, Stephan
dc.contributor.imecauthor	Horiguchi, Naoto
dc.contributor.imecauthor	Absil, Philippe
dc.contributor.orcidimec	De Keersgieter, An::0000-0002-5527-8582
dc.contributor.orcidimec	Horiguchi, Naoto::0000-0001-5490-0416
dc.date.accessioned	2021-10-18T23:38:02Z
dc.date.available	2021-10-18T23:38:02Z
dc.date.issued	2010-09
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/18253
dc.source.beginpage	1024
dc.source.conference	International Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate	22/09/2010
dc.source.conferencelocation	Tokyo Japan
dc.source.endpage	1025
dc.title	FinFETs junctions optimization by conventional ion implantation for (sub-)22nm technology nodes circuit applications
dc.type	Proceedings paper
dspace.entity.type	Publication
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