Two-dimensional carrier mapping at the nanometerscale on 32nm node targeted p-MOSFETs using high vacuum scanning spreading resistance microscopy

dc.contributor.author	Eyben, Pierre
dc.contributor.author	Clarysse, Trudo
dc.contributor.author	Mody, Jay
dc.contributor.author	Nazir, Aftab
dc.contributor.author	Schulze, Andreas
dc.contributor.author	Hantschel, Thomas
dc.contributor.author	Vandervorst, Wilfried
dc.contributor.imecauthor	Eyben, Pierre
dc.contributor.imecauthor	Nazir, Aftab
dc.contributor.imecauthor	Hantschel, Thomas
dc.contributor.imecauthor	Vandervorst, Wilfried
dc.contributor.orcidimec	Hantschel, Thomas::0000-0001-9476-4084
dc.date.accessioned	2021-10-20T10:57:22Z
dc.date.available	2021-10-20T10:57:22Z
dc.date.issued	2012
dc.identifier.issn	0038-1101
dc.identifier.uri	https://imec-publications.be/handle/20.500.12860/20665
dc.identifier.url	http://dx.doi.org/10.1016/j.sse.2011.10.023
dc.source.beginpage	69
dc.source.endpage	73
dc.source.journal	Solid-State Electronics
dc.source.volume	71
dc.title	Two-dimensional carrier mapping at the nanometerscale on 32nm node targeted p-MOSFETs using high vacuum scanning spreading resistance microscopy
dc.type	Journal article
dspace.entity.type	Publication
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