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Study on memory characteristics of fin-shaped feedback field effect transistor

 
dc.contributor.authorHan, Shinick
dc.contributor.authorKim, Younghyun
dc.contributor.authorSon, Donghee
dc.contributor.authorBaac, Hyoung Won
dc.contributor.authorWon, Sang Min
dc.contributor.authorShin, Changhwan
dc.contributor.imecauthorKim, Younghyun
dc.date.accessioned2022-05-11T10:03:27Z
dc.date.available2022-05-02T02:11:16Z
dc.date.available2022-05-11T10:03:27Z
dc.date.issued2022
dc.description.wosFundingTextThis research was supported by the MOTIE (Ministry of Trade, Industry, and Energy) in Korea, under the Fostering Global Talents for Innovative Growth Program (P0008745) supervised by the Korea Institute for Advancement of Technology (KIAT).
dc.identifier.doi10.1088/1361-6641/ac643e
dc.identifier.issn0268-1242
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39723
dc.publisherIOP Publishing Ltd
dc.source.beginpage065006
dc.source.issue6
dc.source.journalSEMICONDUCTOR SCIENCE AND TECHNOLOGY
dc.source.numberofpages7
dc.source.volume37
dc.subject.keywords1T-DRAM
dc.title

Study on memory characteristics of fin-shaped feedback field effect transistor

dc.typeJournal article
dspace.entity.typePublication
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