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The enhanced degradation of MOSFETs damaged by hot holes

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dc.contributor.authorAl-Kofahi, I. S.
dc.contributor.authorZhang, Jenny
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-09-29T14:15:55Z
dc.date.available2021-09-29T14:15:55Z
dc.date.issued1996
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/1051
dc.source.beginpage711
dc.source.conferenceProceedings of the Third International Symposium on the Physics and Chemistry of SiO2 and the SiO2 Interface; May 5-10, 1996. Lo
dc.source.conferencelocation
dc.source.endpage721
dc.title

The enhanced degradation of MOSFETs damaged by hot holes

dc.typeProceedings paper
dspace.entity.typePublication
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