Publication:

Reliability of high-performance monolayer MoS<sub>2</sub> transistors on scaled high-κ HfO<sub>2</sub>

Date

2025-JAN 24
Journal article
https://doi.org/10.1038/s41699-025-00527-7
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dc.contributor.authorLan, Hao-Yu
dc.contributor.authorYang, Shao-Heng
dc.contributor.authorKantre, Karim-Alexandros
dc.contributor.authorCott, Daire
dc.contributor.authorTripathi, Rahul
dc.contributor.authorAppenzeller, Joerg
dc.contributor.authorChen, Zhihong
dc.contributor.imecauthorKantre, Karim-Alexandros
dc.contributor.imecauthorCott, Daire
dc.contributor.orcidimecKantre, Karim-Alexandros::0000-0002-0077-2620
dc.contributor.orcidimecCott, Daire::0009-0000-0890-8820
dc.date.accessioned2025-02-02T17:54:30Z
dc.date.available2025-02-02T17:54:30Z
dc.date.issued2025-JAN 24
dc.description.wosFundingTextThe authors would like to thank Dr. Muhammad Ashraful Alam for useful discussions. This work was supported in part by the Semiconductor Research Corporation (SRC) and National Institute of Standards and Technology (NIST) through the NEW LIMITS Center under Award 70NANB17H041.
dc.identifier.doi10.1038/s41699-025-00527-7
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/45153
dc.publisherNATURE PORTFOLIO
dc.source.issue1
dc.source.journalNPJ 2D MATERIALS AND APPLICATIONS
dc.source.numberofpages8
dc.source.volume9
dc.subject.keywordsCOMPACT-PHYSICS FRAMEWORK
dc.subject.keywords2-DIMENSIONAL MATERIALS
dc.subject.keywordsINSTABILITY
dc.subject.keywordsHYSTERESIS
dc.subject.keywordsDEPENDENCE
dc.subject.keywordsTIME
dc.title

Reliability of high-performance monolayer MoS2 transistors on scaled high-κ HfO2

dc.typeJournal article
dspace.entity.typePublication
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