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HF-last wet clean in combination with a low temperature GeH4-assisted HCl in-situ clean prior to Si0.8Ge0.2-on-Si epitaxial growth

Date

2014
Proceedings Paper
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dc.contributor.authorWostyn, Kurt
dc.contributor.authorDhayalan, Sathish Kumar
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.authorDouhard, Bastien
dc.contributor.authorMoussa, Alain
dc.contributor.authorRondas, Dirk
dc.contributor.authorKenis, Karine
dc.contributor.authorMertens, Paul
dc.contributor.authorHolsteyns, Frank
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorProfijt, Harald
dc.contributor.imecauthorWostyn, Kurt
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.imecauthorDouhard, Bastien
dc.contributor.imecauthorMoussa, Alain
dc.contributor.imecauthorRondas, Dirk
dc.contributor.imecauthorKenis, Karine
dc.contributor.imecauthorMertens, Paul
dc.contributor.imecauthorHolsteyns, Frank
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.orcidimecWostyn, Kurt::0000-0003-3995-0292
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-22T08:25:47Z
dc.date.available2021-10-22T08:25:47Z
dc.date.issued2014
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/24833
dc.identifier.urlhttp://www.scientific.net/SSP.219.20
dc.source.beginpage20
dc.source.conferenceUltra Clean Processing of Semiconductor Surfaces XII
dc.source.conferencedate21/09/2014
dc.source.conferencelocationBrussels Belgium
dc.source.endpage23
dc.title

HF-last wet clean in combination with a low temperature GeH4-assisted HCl in-situ clean prior to Si0.8Ge0.2-on-Si epitaxial growth

dc.typeProceedings paper
dspace.entity.typePublication
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