Publication:

Elevated co-silicide for sub-100nm high performance and RF CMOS

Date

2002
Proceedings Paper
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dc.contributor.authorJurczak, Gosia
dc.contributor.authorde Potter de ten Broeck, Muriel
dc.contributor.authorRooyackers, Rita
dc.contributor.authorJeamsaksiri, Wutthinan
dc.contributor.authorRedolfi, Augusto
dc.contributor.authorGrau, Lluis
dc.contributor.authorLauwers, Anne
dc.contributor.authorLindsay, Richard
dc.contributor.authorPeytier, Ivan
dc.contributor.authorAugendre, Emmanuel
dc.contributor.authorBadenes, Gonçal
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorde Potter de ten Broeck, Muriel
dc.contributor.imecauthorRedolfi, Augusto
dc.contributor.imecauthorLauwers, Anne
dc.date.accessioned2021-10-14T21:58:17Z
dc.date.available2021-10-14T21:58:17Z
dc.date.embargo9999-12-31
dc.date.issued2002
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/6457
dc.source.beginpage311
dc.source.conferenceESSDERC - 32nd European Solid-State Device Research Conference
dc.source.conferencedate24/09/2002
dc.source.conferencelocationFirenze Italy
dc.source.endpage314
dc.title

Elevated co-silicide for sub-100nm high performance and RF CMOS

dc.typeProceedings paper
dspace.entity.typePublication
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