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Threshold voltage instability in CMOS high-K dielectrics: comparison between hafnium and aluminum oxide

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dc.contributor.authorCimino, S.
dc.contributor.authorPantisano, Luigi
dc.contributor.authorPacagnella, A.
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorGroeseneken, Guido
dc.date.accessioned2021-10-15T04:09:24Z
dc.date.available2021-10-15T04:09:24Z
dc.date.issued2003
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/7322
dc.source.conference34th IEEE Semiconductor Interface Specialists Conference - SISC
dc.source.conferencedate4/12/2003
dc.source.conferencelocationWashington DC USA
dc.title

Threshold voltage instability in CMOS high-K dielectrics: comparison between hafnium and aluminum oxide

dc.typeOral presentation
dspace.entity.typePublication
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