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Al2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition
Publication:
Al2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition
Date
2014
Journal article
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Ameen, Mahmoud
;
Nyns, Laura
;
Sioncke, Sonja
;
Lin, Dennis
;
Ivanov, Tsvetan
;
Conard, Thierry
;
Meersschaut, Johan
;
Feteha, M. Y.
;
Van Elshocht, Sven
;
Delabie, Annelies
Journal
ECS Journal of Solid State Science and Technology
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1930
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations
Metrics
Views
1930
since deposited on 2021-10-22
Acq. date: 2025-10-23
Citations