Publication:

Al2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition

Date

2014
Journal article
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dc.contributor.authorAmeen, Mahmoud
dc.contributor.authorNyns, Laura
dc.contributor.authorSioncke, Sonja
dc.contributor.authorLin, Dennis
dc.contributor.authorIvanov, Tsvetan
dc.contributor.authorConard, Thierry
dc.contributor.authorMeersschaut, Johan
dc.contributor.authorFeteha, M. Y.
dc.contributor.authorVan Elshocht, Sven
dc.contributor.authorDelabie, Annelies
dc.contributor.imecauthorNyns, Laura
dc.contributor.imecauthorLin, Dennis
dc.contributor.imecauthorIvanov, Tsvetan
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorMeersschaut, Johan
dc.contributor.imecauthorVan Elshocht, Sven
dc.contributor.imecauthorDelabie, Annelies
dc.contributor.orcidimecNyns, Laura::0000-0001-8220-870X
dc.contributor.orcidimecIvanov, Tsvetan::0000-0003-3407-2742
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecMeersschaut, Johan::0000-0003-2467-1784
dc.contributor.orcidimecVan Elshocht, Sven::0000-0002-6512-1909
dc.date.accessioned2021-10-22T00:43:29Z
dc.date.available2021-10-22T00:43:29Z
dc.date.issued2014
dc.identifier.issn2162-8769
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/23487
dc.identifier.urlhttp://jss.ecsdl.org/content/3/11/N133.abstract
dc.source.beginpageN133
dc.source.endpageN144
dc.source.issue11
dc.source.journalECS Journal of Solid State Science and Technology
dc.source.volume3
dc.title

Al2O3/InGaAs metal-oxide-semiconductor interface properties: impact of Gd2O3 and Sc2O3 interfacial layers by atomic layer deposition

dc.typeJournal article
dspace.entity.typePublication
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