Publication:

Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory

Date

2023
Journal article
https://doi.org/10.3390/nano13142104
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dc.contributor.authorChang, Ting-Yu
dc.contributor.authorWang, Kuan-Chi
dc.contributor.authorLiu, Hsien-Yang
dc.contributor.authorHseun, Jing-Hua
dc.contributor.authorPeng, Wei-Cheng
dc.contributor.authorRonchi, Nicolo
dc.contributor.authorCelano, Umberto
dc.contributor.authorBanerjee, Kaustuv
dc.contributor.authorVan Houdt, Jan
dc.contributor.authorWu, Tian-Li
dc.contributor.imecauthorRonchi, Nicolo
dc.contributor.imecauthorCelano, Umberto
dc.contributor.imecauthorBanerjee, Kaustuv
dc.contributor.imecauthorVan Houdt, Jan
dc.contributor.orcidimecRonchi, Nicolo::0000-0002-7961-4077
dc.contributor.orcidimecCelano, Umberto::0000-0002-2856-3847
dc.contributor.orcidimecBanerjee, Kaustuv::0000-0001-8003-6211
dc.contributor.orcidimecVan Houdt, Jan::0000-0003-1381-6925
dc.date.accessioned2023-12-20T11:39:39Z
dc.date.available2023-08-11T16:46:11Z
dc.date.available2023-09-11T08:00:29Z
dc.date.available2023-12-20T11:39:39Z
dc.date.embargo2023-07-19
dc.date.issued2023
dc.description.wosFundingTextThis work was financially supported by the "Advanced Semiconductor Technology Research Center" from The Featured Areas Research Center Program within the framework of the Higher Education Sprout Project by the Ministry of Education (MOE) in Taiwan. This work was also partly supported by the Ministry of Science and Technology, Taiwan, under Grant MOST 111-2634-F-A49-008, 111-2622-8-A49-018-SB, and 112-2636-E-A49-005.
dc.identifier.doi10.3390/nano13142104
dc.identifier.issn2079-4991
dc.identifier.pmidMEDLINE:37513115
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/42325
dc.publisherMDPI
dc.source.beginpageArt. 2104
dc.source.endpagena
dc.source.issue10
dc.source.journalNANOMATERIALS
dc.source.numberofpages9
dc.source.volume9
dc.subject.disciplineElectrical & electronic engineering
dc.subject.keywordsFERAM
dc.title

Comprehensive Investigation of Constant Voltage Stress Time-Dependent Breakdown and Cycle-to-Breakdown Reliability in Y-Doped and Si-Doped HfO2 Metal-Ferroelectric-Metal Memory

dc.typeJournal article
dspace.entity.typePublication
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