Publication:

Silicide yield improvement with NiPtSi formation by laser anneal for advanced low power platform CMOS technology

Date

2009
Proceedings Paper
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dc.contributor.authorOrtolland, Claude
dc.contributor.authorRosseel, Erik
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorKerner, Christoph
dc.contributor.authorMertens, Sofie
dc.contributor.authorKittl, Jorge
dc.contributor.authorVerleysen, Eveline
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorLauwers, Anne
dc.contributor.authorAbsil, Philippe
dc.contributor.authorBiesemans, Serge
dc.contributor.authorMathukrishnan, S.
dc.contributor.authorSrinivasan, S.
dc.contributor.authorMayur, A.J.
dc.contributor.authorSchreutelkamp, Rob
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorKerner, Christoph
dc.contributor.imecauthorMertens, Sofie
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorLauwers, Anne
dc.contributor.imecauthorAbsil, Philippe
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecMertens, Sofie::0000-0002-1482-6730
dc.date.accessioned2021-10-18T01:20:18Z
dc.date.available2021-10-18T01:20:18Z
dc.date.embargo9999-12-31
dc.date.issued2009
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/15953
dc.source.beginpage23
dc.source.conferenceIEEE International Electron Devices Meeting - IEDM
dc.source.conferencedate7/12/2009
dc.source.conferencelocationBaltimore, MD USA
dc.source.endpage26
dc.title

Silicide yield improvement with NiPtSi formation by laser anneal for advanced low power platform CMOS technology

dc.typeProceedings paper
dspace.entity.typePublication
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