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45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm

Date

2004
Proceedings Paper
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dc.contributor.authorHenson, Kirklen
dc.contributor.authorLander, Rob
dc.contributor.authorDemand, Marc
dc.contributor.authorDachs, Charles
dc.contributor.authorKaczer, Ben
dc.contributor.authorDeweerd, Wim
dc.contributor.authorSchram, Tom
dc.contributor.authorTokei, Zsolt
dc.contributor.authorHooker, Jacob
dc.contributor.authorCubaynes, Florence
dc.contributor.authorBeckx, Stephan
dc.contributor.authorBoullart, Werner
dc.contributor.authorCoenegrachts, Bart
dc.contributor.authorVertommen, Johan
dc.contributor.authorRichard, Olivier
dc.contributor.authorBender, Hugo
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorKaiser, M.
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorJurczak, Gosia
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorSchram, Tom
dc.contributor.imecauthorTokei, Zsolt
dc.contributor.imecauthorBeckx, Stephan
dc.contributor.imecauthorBoullart, Werner
dc.contributor.imecauthorCoenegrachts, Bart
dc.contributor.imecauthorRichard, Olivier
dc.contributor.imecauthorBender, Hugo
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorJurczak, Gosia
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.contributor.orcidimecRichard, Olivier::0000-0002-3994-8021
dc.contributor.orcidimecSchram, Tom::0000-0003-1533-7055
dc.contributor.orcidimecEveraert, Jean-Luc::0000-0002-0660-9090
dc.date.accessioned2021-10-15T13:48:45Z
dc.date.available2021-10-15T13:48:45Z
dc.date.issued2004
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/9027
dc.source.beginpage851
dc.source.conferenceTechnical Digest International Electron Devices Meeting - IEDM
dc.source.conferencedate13/12/2004
dc.source.conferencelocationSan Francisco, CA USA
dc.source.endpage854
dc.title

45nm nMOSFET with metal gate on thin SiON driving 1150μA/μm and off-state of 10nA/μm

dc.typeProceedings paper
dspace.entity.typePublication
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