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Orientation dependence of Si1-xCx:P growth and the impact on FiNFET structures

Date

2012-10
Proceedings Paper
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dc.contributor.authorTolle, John
dc.contributor.authorWeeks, Doran
dc.contributor.authorBauer, Matthias
dc.contributor.authorMachkaoutsan, Vladimir
dc.contributor.authorMaes, Jan
dc.contributor.authorTogo, Mitsuhiro
dc.contributor.authorBrus, Stephan
dc.contributor.authorHikavyy, Andriy
dc.contributor.authorLoo, Roger
dc.contributor.imecauthorMachkaoutsan, Vladimir
dc.contributor.imecauthorMaes, Jan
dc.contributor.imecauthorBrus, Stephan
dc.contributor.imecauthorHikavyy, Andriy
dc.contributor.imecauthorLoo, Roger
dc.contributor.orcidimecHikavyy, Andriy::0000-0002-8201-075X
dc.contributor.orcidimecLoo, Roger::0000-0003-3513-6058
dc.date.accessioned2021-10-20T17:02:20Z
dc.date.available2021-10-20T17:02:20Z
dc.date.embargo9999-12-31
dc.date.issued2012-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/21622
dc.source.beginpage491
dc.source.conferenceSiGe, Ge, and Related Compunds 5: Materials, Processing, and Devices
dc.source.conferencedate7/10/2012
dc.source.conferencelocationHonolulu, HI USA
dc.source.endpage497
dc.title

Orientation dependence of Si1-xCx:P growth and the impact on FiNFET structures

dc.typeProceedings paper
dspace.entity.typePublication
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