Publication:

Direct Assessment of Defective Regions in Monolayer MoS<sub>2</sub> Field-Effect Transistors through <i>In Situ</i> Scanning Probe Microscopy Measurements

Date

2024
Journal article
https://doi.org/10.1021/acsnano.4c03080
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dc.contributor.authorMinj, Albert
dc.contributor.authorKoladi Mootheri, Vivek
dc.contributor.authorBanerjee, Sreetama
dc.contributor.authorNalin Mehta, Ankit
dc.contributor.authorSerron, Jill
dc.contributor.authorHantschel, Thomas
dc.contributor.authorAsselberghs, Inge
dc.contributor.authorGoux, Ludovic
dc.contributor.authorKar, Gouri Sankar
dc.contributor.authorHeyns, Marc
dc.contributor.authorLin, Dennis
dc.contributor.imecauthorMinj, Albert
dc.contributor.imecauthorBanerjee, Sreetama
dc.contributor.imecauthorNalin Mehta, Ankit
dc.contributor.imecauthorSerron, Jill
dc.contributor.imecauthorHantschel, Thomas
dc.contributor.imecauthorAsselberghs, Inge
dc.contributor.imecauthorGoux, Ludovic
dc.contributor.imecauthorKar, Gouri Sankar
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorKoladi Mootheri, Vivek
dc.contributor.imecauthorLin, Dennis
dc.contributor.orcidimecMinj, Albert::0000-0003-0878-3276
dc.contributor.orcidimecBanerjee, Sreetama::0000-0002-6297-9547
dc.contributor.orcidimecNalin Mehta, Ankit::0000-0002-2169-940X
dc.contributor.orcidimecSerron, Jill::0000-0002-9101-8139
dc.contributor.orcidimecHantschel, Thomas::0000-0001-9476-4084
dc.contributor.orcidimecAsselberghs, Inge::0000-0001-8371-3222
dc.contributor.orcidimecGoux, Ludovic::0000-0002-1276-2278
dc.contributor.orcidimecKoladi Mootheri, Vivek::0000-0002-1373-8405
dc.contributor.orcidimecLin, Dennis::0000-0002-1577-6050
dc.date.accessioned2024-09-24T09:31:03Z
dc.date.available2024-04-07T18:16:58Z
dc.date.available2024-09-24T09:31:03Z
dc.date.issued2024
dc.description.wosFundingTextThe research was conducted at and supported by the Materials and Components Analysis department of IMEC. It acknowledges partial funding by IMEC's Industrial Affiliation programs. The authors would like to acknowledge Devin Verreck for the valuable input regarding the TCAD simulation of 2D FETs.
dc.identifier.doi10.1021/acsnano.4c03080
dc.identifier.issn1936-0851
dc.identifier.pmidMEDLINE:38556983
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/43794
dc.publisherAMER CHEMICAL SOC
dc.source.beginpage10653
dc.source.endpage10666
dc.source.issue15
dc.source.journalACS NANO
dc.source.numberofpages14
dc.source.volume18
dc.subject.keywordsSINGLE-LAYER MOS2
dc.subject.keywordsINDUCED PHOTOLUMINESCENCE
dc.subject.keywordsEDGE STATES
dc.subject.keywordsCONTACT
dc.subject.keywordsCAPACITANCE
dc.subject.keywordsBOUNDARIES
dc.subject.keywordsGRAPHENE
dc.subject.keywordsGAP
dc.title

Direct Assessment of Defective Regions in Monolayer MoS2 Field-Effect Transistors through In Situ Scanning Probe Microscopy Measurements

dc.typeJournal article
dspace.entity.typePublication
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