Publication:

Dry-etch fin patterning of a sub-22nm node SRAM cell: EUV lithography new dry etch challenges

Date

2011
Proceedings Paper
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dc.contributor.authorAltamirano Sanchez, Efrain
dc.contributor.authorYamaguchi, Yoko Yamaguchi
dc.contributor.authorLindain, Jeffrey Lindain
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorErcken, Monique
dc.contributor.authorDemand, Marc
dc.contributor.authorBoullart, Werner
dc.contributor.imecauthorAltamirano Sanchez, Efrain
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorErcken, Monique
dc.contributor.imecauthorDemand, Marc
dc.contributor.imecauthorBoullart, Werner
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecBoullart, Werner::0000-0001-7614-2097
dc.date.accessioned2021-10-19T12:28:57Z
dc.date.available2021-10-19T12:28:57Z
dc.date.embargo9999-12-31
dc.date.issued2011
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/18472
dc.source.beginpage377
dc.source.conferenceChina Semiconductor Technology International Conference - CSTIC
dc.source.conferencedate12/03/2011
dc.source.conferencelocationShanghai China
dc.source.endpage382
dc.title

Dry-etch fin patterning of a sub-22nm node SRAM cell: EUV lithography new dry etch challenges

dc.typeProceedings paper
dspace.entity.typePublication
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