Publication:

Titanium silicide on Si:P with precontact amorphization implantation treatment: contact resistivity approaching 1×10-9 Ohm-cm²

Date

2016
Journal article
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dc.contributor.authorYu, Hao
dc.contributor.authorSchaekers, Marc
dc.contributor.authorPeter, Antony
dc.contributor.authorPourtois, Geoffrey
dc.contributor.authorRosseel, Erik
dc.contributor.authorLee, Joon-Gon
dc.contributor.authorSong, Woo-Bin
dc.contributor.authorShin, Keo Myoung
dc.contributor.authorEveraert, Jean-Luc
dc.contributor.authorChew, Soon Aik
dc.contributor.authorDemuynck, Steven
dc.contributor.authorKim, Daeyong
dc.contributor.authorBarla, Kathy
dc.contributor.authorMocuta, Anda
dc.contributor.authorHoriguchi, Naoto
dc.contributor.authorThean, Aaron
dc.contributor.authorCollaert, Nadine
dc.contributor.authorDe Meyer, Kristin
dc.contributor.imecauthorYu, Hao
dc.contributor.imecauthorSchaekers, Marc
dc.contributor.imecauthorPeter, Antony
dc.contributor.imecauthorPourtois, Geoffrey
dc.contributor.imecauthorRosseel, Erik
dc.contributor.imecauthorEveraert, Jean-Luc
dc.contributor.imecauthorDemuynck, Steven
dc.contributor.imecauthorBarla, Kathy
dc.contributor.imecauthorHoriguchi, Naoto
dc.contributor.imecauthorThean, Aaron
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorDe Meyer, Kristin
dc.contributor.orcidimecYu, Hao::0000-0002-1976-0259
dc.contributor.orcidimecSchaekers, Marc::0000-0002-1496-7816
dc.contributor.orcidimecPourtois, Geoffrey::0000-0003-2597-8534
dc.contributor.orcidimecHoriguchi, Naoto::0000-0001-5490-0416
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecPeter, Antony::0000-0001-5941-0563
dc.contributor.orcidimecEveraert, Jean-Luc::0000-0002-0660-9090
dc.date.accessioned2021-10-23T17:38:57Z
dc.date.available2021-10-23T17:38:57Z
dc.date.embargo9999-12-31
dc.date.issued2016
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/27641
dc.identifier.urlhttp://ieeexplore.ieee.org/document/7725953/
dc.source.beginpage4632
dc.source.endpage4641
dc.source.issue12
dc.source.journalIEEE Transactions on Electron Devices
dc.source.volume63
dc.title

Titanium silicide on Si:P with precontact amorphization implantation treatment: contact resistivity approaching 1×10-9 Ohm-cm²

dc.typeJournal article
dspace.entity.typePublication
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