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Effects of Back-Gate Bias on the Mobility and Reliability of Junction-Less FDSOI Transistors for 3-D Sequential Integration
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Effects of Back-Gate Bias on the Mobility and Reliability of Junction-Less FDSOI Transistors for 3-D Sequential Integration
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Date
2021
Journal article
https://doi.org/10.1109/TED.2020.3041813
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Wu, Zhicheng
;
Franco, Jacopo
;
Vandooren, Anne
;
Roussel, Philippe
;
Kaczer, Ben
;
Linten, Dimitri
;
Collaert, Nadine
;
Groeseneken, Guido
Journal
IEEE TRANSACTIONS ON ELECTRON DEVICES
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1812
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Acq. date: 2025-12-17
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Views
1812
since deposited on 2022-03-02
2
last month
Acq. date: 2025-12-17
Citations