Publication:

Effects of Back-Gate Bias on the Mobility and Reliability of Junction-Less FDSOI Transistors for 3-D Sequential Integration

Date

2021
Journal article
https://doi.org/10.1109/TED.2020.3041813
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dc.contributor.authorWu, Zhicheng
dc.contributor.authorFranco, Jacopo
dc.contributor.authorVandooren, Anne
dc.contributor.authorRoussel, Philippe
dc.contributor.authorKaczer, Ben
dc.contributor.authorLinten, Dimitri
dc.contributor.authorCollaert, Nadine
dc.contributor.authorGroeseneken, Guido
dc.contributor.imecauthorWu, Zhicheng
dc.contributor.imecauthorFranco, Jacopo
dc.contributor.imecauthorVandooren, Anne
dc.contributor.imecauthorRoussel, Philippe
dc.contributor.imecauthorKaczer, Ben
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.imecauthorCollaert, Nadine
dc.contributor.imecauthorGroeseneken, Guido
dc.contributor.orcidimecFranco, Jacopo::0000-0002-7382-8605
dc.contributor.orcidimecBen Kaczer::0000-0002-1484-4007
dc.contributor.orcidimecGroeseneken, Guido::0000-0003-3763-2098
dc.contributor.orcidimecVandooren, Anne::0000-0002-2412-0176
dc.contributor.orcidimecRoussel, Philippe::0000-0002-0402-8225
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecCollaert, Nadine::0000-0002-8062-3165
dc.contributor.orcidimecKaczer, Ben::0000-0002-1484-4007
dc.date.accessioned2022-03-02T13:47:15Z
dc.date.available2022-03-02T13:47:15Z
dc.date.issued2021
dc.identifier.doi10.1109/TED.2020.3041813
dc.identifier.issn0018-9383
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/39231
dc.publisherIEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
dc.source.beginpage464
dc.source.endpage470
dc.source.issue2
dc.source.journalIEEE TRANSACTIONS ON ELECTRON DEVICES
dc.source.numberofpages7
dc.source.volume68
dc.title

Effects of Back-Gate Bias on the Mobility and Reliability of Junction-Less FDSOI Transistors for 3-D Sequential Integration

dc.typeJournal article
dspace.entity.typePublication
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