Publication:

Low-impedance Contact CDM – Evaluation and Modeling

Date

2019
Proceedings Paper
https://doi.org/10.23919/eos/esd.2019.8869976
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cris.virtual.orcid0000-0002-3623-1842
cris.virtual.orcid0000-0002-8390-6785
cris.virtual.orcid0000-0001-8434-1838
cris.virtual.orcid0000-0002-6481-2951
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cris.virtualsource.orcide0386a23-f2bf-4f53-a36f-c1380bca0db7
dc.contributor.authorSimicic, Marko
dc.contributor.authorWu, Wei-Min
dc.contributor.authorChen, Shih-Hung
dc.contributor.authorJack, Nathan
dc.contributor.authorTamura, Shinichi
dc.contributor.authorShimada, Yohei
dc.contributor.authorSawada, Masanori
dc.contributor.authorLinten, Dimitri
dc.contributor.imecauthorSimicic, Marko
dc.contributor.imecauthorWu, Wei-Min
dc.contributor.imecauthorChen, Shih-Hung
dc.contributor.imecauthorLinten, Dimitri
dc.contributor.orcidimecSimicic, Marko::0000-0002-3623-1842
dc.contributor.orcidimecLinten, Dimitri::0000-0001-8434-1838
dc.contributor.orcidimecChen, Shih-Hung::0000-0002-6481-2951
dc.date.accessioned2021-10-27T18:19:23Z
dc.date.available2021-10-27T18:19:23Z
dc.date.issued2019
dc.description.abstractStandard charged device model (CDM) ESD simulators used today cannot be used at wafer level and suffer from high zap-to-zap peak current variability at low voltages. The low-impedance contact CDM provides a solution to these problems. In this paper we evaluate its performance and propose a model for the setup.
dc.identifier.doi10.23919/eos/esd.2019.8869976
dc.identifier.issn0739-5159
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/34005
dc.identifier.urlhttps://ieeexplore.ieee.org/document/8869976
dc.publisherIEEE
dc.source.beginpage1
dc.source.conference2019 41st Annual EOS/ESD Symposium (EOS/ESD)
dc.source.conferencedate15/09/2019
dc.source.conferencelocationRiverside, CA USA
dc.source.journal2019 41st Annual EOS/ESD Symposium (EOS/ESD)
dc.title

Low-impedance Contact CDM – Evaluation and Modeling

dc.typeProceedings paper
dspace.entity.typePublication
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