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On the effects of a pressure iInduced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon

Date

2015
Journal article
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dc.contributor.authorCoq Germanicus, Rosine
dc.contributor.authorLeclère, Philippe
dc.contributor.authorGuhel, Y.
dc.contributor.authorBoudart, B.
dc.contributor.authorTouboul, A. D.
dc.contributor.authorDescamps, P.
dc.contributor.authorHug, E.
dc.contributor.authorEyben, Pierre
dc.contributor.imecauthorEyben, Pierre
dc.date.accessioned2021-10-22T18:44:56Z
dc.date.available2021-10-22T18:44:56Z
dc.date.embargo9999-12-31
dc.date.issued2015
dc.identifier.issn0021-8979
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/25101
dc.identifier.urlhttp://scitation.aip.org/content/aip/journal/jap/117/24/10.1063/1.4923052
dc.source.beginpage244306
dc.source.issue24
dc.source.journalJournal of Applied Physics
dc.source.volume117
dc.title

On the effects of a pressure iInduced amorphous silicon layer on consecutive spreading resistance microscopy scans of doped silicon

dc.typeJournal article
dspace.entity.typePublication
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