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A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K
Publication:
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K
Date
2000
Proceedings Paper
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4617.pdf
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Basic data
APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nicolett, A. S.
;
Martino, Joao Antonio
;
Simoen, Eddy
;
Claeys, Cor
Journal
Abstract
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1948
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations
Metrics
Views
1948
since deposited on 2021-10-14
Acq. date: 2025-10-23
Citations