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A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K
Publication:
A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K
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Date
2000
Proceedings Paper
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APA
Chicago
Harvard
IEEE
Basic data
APA
Chicago
Harvard
IEEE
Author(s)
Nicolett, A. S.
;
Martino, Joao Antonio
;
Simoen, Eddy
;
Claeys, Cor
Journal
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1954
since deposited on 2021-10-14
1
last month
Acq. date: 2026-01-06
Citations
Metrics
Views
1954
since deposited on 2021-10-14
1
last month
Acq. date: 2026-01-06
Citations