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A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K

Date

2000
Proceedings Paper
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dc.contributor.authorNicolett, A. S.
dc.contributor.authorMartino, Joao Antonio
dc.contributor.authorSimoen, Eddy
dc.contributor.authorClaeys, Cor
dc.contributor.imecauthorSimoen, Eddy
dc.contributor.orcidimecSimoen, Eddy::0000-0002-5218-4046
dc.date.accessioned2021-10-14T13:28:09Z
dc.date.available2021-10-14T13:28:09Z
dc.date.embargo9999-12-31
dc.date.issued2000
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/4620
dc.source.beginpageD45/1
dc.source.conferenceProceedings of the 3rd IEEE International Caracas Conference on Devices, Circuits and Systems - ICCDCS
dc.source.conferencedate15/03/2000
dc.source.conferencelocationCancun Mexico
dc.source.endpage1-D45/5
dc.title

A new method to extract the LDD doping concentration on fully depleted SOI nMOSFETs at 300K

dc.typeProceedings paper
dspace.entity.typePublication
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