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Current status and addressing the challenges of Hf-based gate stack toward 45nm-LSTP application

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dc.contributor.authorNiwa, Masaaki
dc.contributor.authorMitsuhashi, Riichirou
dc.contributor.authorYamamoto, K.
dc.contributor.authorHayashi, S.
dc.contributor.authorHarada, Yoshinao
dc.contributor.authorRothschild, Aude
dc.contributor.authorHoffmann, Thomas Y.
dc.contributor.authorKubicek, Stefan
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorBiesemans, Serge
dc.contributor.authorKubota, M.
dc.contributor.imecauthorKubicek, Stefan
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.imecauthorBiesemans, Serge
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-16T03:39:46Z
dc.date.available2021-10-16T03:39:46Z
dc.date.issued2005-10
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/10933
dc.source.beginpage6
dc.source.conferenceExtended Abstracts of the International Conference on Solid State Devices and Materials - SSDM
dc.source.conferencedate13/09/2005
dc.source.conferencelocationKobe Japan
dc.source.endpage7
dc.title

Current status and addressing the challenges of Hf-based gate stack toward 45nm-LSTP application

dc.typeProceedings paper
dspace.entity.typePublication
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