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Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

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dc.contributor.authorNohira, Hiroshi
dc.contributor.authorTsai, Wilman
dc.contributor.authorBesling, Wim
dc.contributor.authorYoung, Edward
dc.contributor.authorPétry, Jasmine
dc.contributor.authorConard, Thierry
dc.contributor.authorVandervorst, Wilfried
dc.contributor.authorDe Gendt, Stefan
dc.contributor.authorHeyns, Marc
dc.contributor.authorMaes, Jos
dc.contributor.authorTuominen, Marko
dc.contributor.imecauthorConard, Thierry
dc.contributor.imecauthorVandervorst, Wilfried
dc.contributor.imecauthorDe Gendt, Stefan
dc.contributor.imecauthorHeyns, Marc
dc.contributor.orcidimecConard, Thierry::0000-0002-4298-5851
dc.contributor.orcidimecDe Gendt, Stefan::0000-0003-3775-3578
dc.date.accessioned2021-10-14T17:27:15Z
dc.date.available2021-10-14T17:27:15Z
dc.date.issued2001
dc.identifier.urihttps://imec-publications.be/handle/20.500.12860/5521
dc.source.conferenceSymposium Q of the E-MRS Spring Meeting 2001: High-k Gate Dielectrics; June 5-8, 2001; Strasbourg, France.
dc.source.conferencelocation
dc.title

Characterization of AlCVD-Al2O3 and ZrO2 layer using X-ray photoelectron spectroscopy

dc.typeOral presentation
dspace.entity.typePublication
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